Cystech Electonics ASD723SN
Advanced Schottky Barrier Diodes
FEATURES
:● Designed for mounting on small surface
● Low stored charge
● Majority carrier conduction Mechanical data:
● Case: 0805(2012) Standard package, molded plastic
● Terminals : Solder plated, solderable per MIL-STD-750, method 2026.
● Polarity: Indicated by cathode band
● Mounting position: Any
● Weight: 4.8mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) Characteristics Continuous Reverse Voltage Average Rectified Current Forward Surge Current @ 8.3ms single half sine-wave superimposed on rated load(JEDEC method) Capacitance between Terminals @ f=1MHz and applied 10VDC Reverse Voltage Junction Temperature Storage Temperature Range Symbol VR IO IFSM CT Tj Tstg Value 30 200 1.5 20 -40 to +125 -40 to +125 Unit V mA A pF °C °CELECTRICAL CHARACTERISTICS
( TA=25°C, unless otherwise noted) Parameter Forward Voltage Reverse Current Condition IF = 200mADC VR = 30VDC Symbol VF IR Min Typ Max 0.55 15 Unit V µA ASD723SN CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Forward Current Derating Curve 120 Percentage of Rated Forward Current---(%) 100 80 60 40 20 0 0 25 50 75 100 125 150 1 0 0.1 0.2 100 Spec.