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CYStech Electronics Corp.
Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 1/7
N -Channel Enhancement Mode Power MOSFET
MTB35N04J3
BVDSS
40V
ID 12A
Features
• Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package
RDSON(MAX)
35mΩ
Equivalent Circuit
MTB35N04J3
Outline
TO-252
G：Gate D：Drain S：Source
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1.
B35N04J3 Datasheet
