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BTA1300A3 - Low VCE(SAT) PNP Epitaxial Planar Transistor

General Description

The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier applications.

High DC current gain and excellent hFE linearity.

600(VCE=-1V,IC=-0.5A) HFE(2)=60(min), 120(typ.)(VCE=-1V,IC=-4A) Low Saturation Voltage VCE(sat)=-0.5V(max)(I

Key Features

  • Symbol BTA1300A3 TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP Pd Tj Tstg Limits -20 -20 -10 -6 -2 -5 750 150 -55~+150 Unit V V V V A mW °C °C Note 1: Single pulse, Pw≤10ms,Duty Cycle≤30%. BTA1300A3 CYStek Product S.

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Datasheet Details

Part number BTA1300A3
Manufacturer Cystech Electonics
File Size 188.61 KB
Description Low VCE(SAT) PNP Epitaxial Planar Transistor
Datasheet download datasheet BTA1300A3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C816A3 Issued Date : 2003.04.15 Revised Date : Page No. : 1/4 Low VCE(SAT) PNP Epitaxial Planar Transistor BTA1300A3 Description The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier applications. • High DC current gain and excellent hFE linearity. HFE(1)=140—600(VCE=-1V,IC=-0.5A) HFE(2)=60(min), 120(typ.)(VCE=-1V,IC=-4A) • Low Saturation Voltage VCE(sat)=-0.5V(max)(IC=-2A,IB=-50mA).