• Part: BTC1815A3
  • Description: General Purpose NPN Epitaxial Planar Transistor
  • Category: Transistor
  • Manufacturer: Cystech Electonics
  • Size: 186.96 KB
Download BTC1815A3 Datasheet PDF
Cystech Electonics
BTC1815A3
BTC1815A3 is General Purpose NPN Epitaxial Planar Transistor manufactured by Cystech Electonics.
Description The BTC1815A3 is designed for use in driver stage of AF amplifier and low speed switching. Features - High voltage and high current : VCEO=50V(min), IC=150m A(max) - High HFE and excellent linearity - plementary to BTA1015A3 Symbol Outline TO-92 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @Ta=25℃ Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB Pd RθJA Tj Tstg Limits 60 50 5 150 50 400 250 125 -55~+125 Unit V V V m A m A m W °C/W °C °C CYStek Product Specification .. CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - VBE(sat) h FE1 h FE2 f T Cob Min. 60 50 5 70 25 80 Typ. 100 Max. 100 100 0.25 1.0 700 3.5 Unit V V V n A n A V V MHz p F Spec. No. : C204A3-T Issued Date : 2003.08.26 Revised Date : Page No. : 2/4 Test Conditions IC=100µA IC=1m A IE=10µA VCB=60V VEB=5V IC=100m A, IB=10m A IC=100m A, IB=10m A VCE=6V, IC=2m A VCE=6V, IC=150m A VCE=10V, IC=1m A VCB=10V, IE=0,f=1MHz - Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of h FE 1 Rank Range O 70~140 Y 120~240 GR 200~400 BL 350~700 CYStek Product Specification .. CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current HFE@VCE=6V Spec. No. : C204A3-T Issued Date : 2003.08.26 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector...