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BTD1805FP Datasheet Low Vcesat NPN Epitaxial Planar Transistor

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Spec. No. : C820FP Issued Date : 2005.03.29 Revised Date :2013.10.29 Page No.

Datasheet Details

Part number BTD1805FP
Manufacturer Cystech Electonics
File Size 277.56 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet BTD1805FP_CystechElectonics.pdf

General Description

The device is manufactured in NPN planar technology by using a “Base Island” layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Key Features

  • Very low collector-to-emitter saturation voltage.
  • Fast switching speed.
  • High current gain characteristic.
  • Large current capability.
  • RoHS compliant package Symbol BTD1805FP Outline TO-220FP (C forming) TO-220FP (S forming) B：Base C：Collector E：Emitter BCE BCE Ordering Information Device BTD1805FP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS com.

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