BTD1805FP
BTD1805FP is Low Vcesat NPN Epitaxial Planar Transistor manufactured by Cystech Electonics.
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
- Very low collector-to-emitter saturation voltage
- Fast switching speed
- High current gain characteristic
- Large current capability
- Ro HS pliant package
Symbol
Outline
TO-220FP (C forming)
TO-220FP (S forming)
B：Base C：Collector E：Emitter
Ordering Information
Device BTD1805FP-0-UB-S
Package
TO-220FP (Ro HS pliant package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C820FP Issued Date : 2005.03.29 Revised Date :2013.10.29 Page No. : 2/ 7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PD
RθJA RθJC Tj Tstg
Limits
150 70 7 5 10 (Note 1) 2 2
62.5 3.125 150 -55~+150
Unit V V...
