Datasheet Details
| Part number | BTD1805FP |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 277.56 KB |
| Description | Low Vcesat NPN Epitaxial Planar Transistor |
| Datasheet |
 BTD1805FP Datasheet
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General Description
The device is manufactured in NPN planar technology by using a “Base Island” layout.
The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Key Features
- Very low collector-to-emitter saturation voltage.
- Fast switching speed.
- High current gain characteristic.
- Large current capability.
- RoHS compliant package Symbol BTD1805FP Outline TO-220FP (C forming) TO-220FP (S forming) B：Base C：Collector E：Emitter BCE BCE Ordering Information Device BTD1805FP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS com.