High BVCEO
High current capability
Complementary to BTB1236AD3
Pb-free package
Symbol
BTD1857AD3
Outline
TO-126ML
B：Base C：Collector E：Emitter E E CC B
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Ba
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CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
Spec. No. : C855D3 Issued Date : 2004.09.21 Revised Date :2005.04.20 Page No. : 1/4
BTD1857AD3
Description
• High BVCEO • High current capability • Complementary to BTB1236AD3 • Pb-free package
Symbol
BTD1857AD3
Outline
TO-126ML
B：Base C：Collector E：Emitter E E CC B
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 180 160 5 1.5 3 1 20 150 -55~+150 Unit V V V A A W W °C °C
BTD1857AD3
CYStek Product Specification
CYStech Electronics Corp.
BTD1857AD3 Datasheet
