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CYStech Electronics Corp.
Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : 2010.07.14 Page No. : 1/6
High Voltage NPN Epitaxial Planar Transistor
BTNA44N3
BVCEO IC RCESAT(typ.)
400V 300mA 10Ω
Features
• High breakdown voltage. (BVCEO =400V) • Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB =10mA/1mA. • Complementary to BTPA94N3 • Pb-free package
Symbol
BTNA44N3
Outline
SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PD RθJA Tj Tstg
Note : When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in.
BTNA44N3 Datasheet
