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BTP6520N3 - PNP Transistor

Features

  • High Breakdown Voltage:BVCEO≥-350V.
  • Complementary to BTN6517N3 Symbol BTP6520N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -350 -350 -5 -500 225 150 -55~+150 Unit V V V mA mW °C °C BTP6520N3 CYStek Product Specification CYStec.

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Datasheet Details

Part number BTP6520N3
Manufacturer Cystech Electonics
File Size 168.48 KB
Description PNP Transistor
Datasheet download datasheet BTP6520N3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor Spec. No. : C321N3 www.DataSheet4U.com Issued Date : 2003.04.12 Revised Date : Page No. : 1/4 BTP6520N3 Features • High Breakdown Voltage:BVCEO≥-350V • Complementary to BTN6517N3 Symbol BTP6520N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -350 -350 -5 -500 225 150 -55~+150 Unit V V V mA mW °C °C BTP6520N3 CYStek Product Specification CYStech Electronics Corp.
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