• Part: BTPA92N3
  • Description: PNP Transistor
  • Category: Transistor
  • Manufacturer: Cystech Electonics
  • Size: 184.30 KB
Download BTPA92N3 Datasheet PDF
Cystech Electonics
BTPA92N3
BTPA92N3 is PNP Transistor manufactured by Cystech Electonics.
Description - High breakdown voltage. (BVCEO=-300V) - Low collector output capacitance. - Ideal for chroma circuit. Symbol Outline SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits -300 -300 -5 -500 225 556 150 -55~+150 Unit V V V m A m W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - VBE(sat) h FE 1 - h FE 2 - h FE 3 f T Cob Min. -300 -300 -5 25 56 25 50 Typ. Max. -0.25 -0.1 -0.5 -0.9 270 6 Unit V V V µA µA V V MHz p F .. Spec. No. : C308N3-H Issued Date : 2003.06.27 Revised Date : Page No. : 2/4 Test Conditions IC=-100µA IC=-1m A IE=-100µA VCB=-200V VEB=-3V IC=-20m A, IB=-2m A IC=-20m A, IB=-2m A VCE=-10V, IC=-1m A VCE=-10V, IC=-10m A VCE=-10V, IC=-30m A VCE=-20V, IC=-10m A, f=100MHz VCB=-20V, f=1MHz - Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of h FE Rank Range K 56~120 P 82~180 Q 120~270 Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(m V) HFE@VCE=10V Current Gain---HFE 10000 VCE(SAT)@IC=10IB 1000 Saturation Voltage vs Collector Current 10 0.1 1 10 100 Collector Current---IC(m A) 10 0.1 1 10 100 Collector Current---IC(m A) CYStek Product Specification CYStech Electronics Corp. Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(m V) 1 .. Spec. No. : C308N3-H Issued Date : 2003.06.27 Revised Date : Page No. : 3/4 Cutoff Frequency vs Collector Current VBE(SAT)@IC=10IB FT@VCE=30V...