DAN202N3 Datasheet | Cystech Electonics

Description The DAN202N3 consists of two high-speed switching diodes with mon cathodes, fabricated in planar technology, and encapsulated in the small SOT-23 plastic SMD package. Equivalent Circuit Outline SOT-23 mon cathode 1：Anode 2：Anode 3：mon cathode Anode Anode Features - Small plastic SMD package - High switching speed: max. 4ns - Continuous reverse voltage: max. 100V - Repetitive peak reverse voltage: max. 110V - Repetitive peak forward current: max. 300m A. Applications - High-speed switching in thick and thin-film circuits. CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings @TA=25℃ Spec. No. : C328N3C Issued Date : 2003.05.14 Revised Date 2011.12. 13 Page No. : 2/6 Parameters Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current(single diode loaded) Continuous forward current(double diode loaded) Repetitive peak forward current Non-repetitive peak forward current @square wave, Tj=125℃ prior to surge t=1μs t=1ms t=1s Total power dissipation(Note 1) Junction Temperature Storage Temperature Note 1: Device mounted on an FR-4 PCB. Symbol Min Max Unit VRRM - 110 V VR - 100 V - 215 125 m A IFRM 450 m A IFSM - 4A 1A - 0.5 A Ptot 250 m W Tj - 150 °C Tstg -65 +150 °C Electrical Characteristics @ Tj=25℃ unless otherwise specified Parameters Forward...