HBN1803M65 - Octuple High Voltage NPN Epitaxial Planar Transistor

Cystech Electonics

General Description

High breakdown voltage.

Low saturation voltage, typical VCE(sat) =0.12V at Ic/IB =20mA/1mA.

Complementary to HBP1804M65 Pb-free lead plating and halogen-free package Equivalent Circuit HBN1803M65 Outline MISWB6×5-18L-A Top View Bottom View H

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HBN1803M65 octuple high voltage npn epitaxial planar transistor by Cystech Electonics - Datasheet Preview

Datasheet Details

Part number	HBN1803M65
Manufacturer	Cystech Electonics
File Size	307.19 KB
Description	Octuple High Voltage NPN Epitaxial Planar Transistor
Datasheet	HBN1803M65 Datasheet

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CYStech Electronics Corp. Octuple High Voltage NPN Epitaxial Planar Transistor HBN1803M65 Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date : Page No. : 1/7 Description • High breakdown voltage. (BVCEO=400V) • Low saturation voltage, typical VCE(sat) =0.12V at Ic/IB =20mA/1mA. • Complementary to HBP1804M65 • Pb-free lead plating and halogen-free package Equivalent Circuit HBN1803M65 Outline MISWB6×5-18L-A Top View Bottom View HBN1803M65 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date : Page No. : 2/7 The following ratings and characteristics apply to each transistor in this device.