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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
www.DataSheet4U.com Spec. No. : C432J3 Issued Date : 2008.12.09 Revised Date : 2009.02.04 Page No. : 1/8
MEN9971J3
Features
• Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package
BVDSS ID RDSON(MAX)
60V 25A 20mΩ
Symbol
MEN9971J3
Outline
TO-252
G：Gate D：Drain S：Source
G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=20A,RG=25Ω Repetitive Avalanche Energy @ L=0.
MEN9971J3 Datasheet
