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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
www.DataSheet4U.com Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Page No. : 1/7
MEN9973J3
Features
• VDS=60V RDS(ON)=80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=5V, ID=6A • Low Gate Charge • Simple Drive Requirement
BVDSS ID RDSON
60V 12A 100mΩ
• Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package
Symbol
MEN9973J3
Outline
TO-252
G：Gate D：Drain S：Source
G D S
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=12A, RG=25Ω Repetitive Avalanche Energy @ L=0.
MEN9973J3 Datasheet
