Datasheet Details
| Part number | MEP4435Q8 |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 366.28 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 MEP4435Q8 Datasheet
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Description
The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
- RDS(ON)=20mΩ@VGS=-10V, ID=-10A RDS(ON)=35mΩ@VGS=-5V, ID=-7A.
- Simple drive requirement.
- Low on-resistance.
- Fast switching speed.
- Pb-free package Equivalent Circuit MEP4435Q8 Outline SOP-8 G：Gate S：Source D：Drain MEP4435Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=100 °C Pulse.