MEP4435Q8 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

Cystech Electonics

Datasheet Details

Part number	MEP4435Q8
Manufacturer	Cystech Electonics
File Size	366.28 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	MEP4435Q8 Datasheet
Additional preview pages of the MEP4435Q8 datasheet.

Product details

Description

The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

RDS(ON)=20mΩ@VGS=-10V, ID=-10A RDS(ON)=35mΩ@VGS=-5V, ID=-7A.
Simple drive requirement.
Low on-resistance.
Fast switching speed.
Pb-free package Equivalent Circuit MEP4435Q8 Outline SOP-8 G：Gate S：Source D：Drain MEP4435Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=100 °C Pulse.

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Published: Mar 9, 2010 |