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MTA050P01S3 - -14V P-Channel Enhancement Mode MOSFET

Features

  • Low gate charge.
  • Compact and low profile SOT-323 package RDSON@VGS=-1.8V, ID=-1A RDSON@VGS=-1.5V, ID=-1A.
  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • Pb-free lead plating package -14V -1.7A 66mΩ(typ) 86mΩ(typ) 121mΩ(typ) 181mΩ(typ) Symbol MTA050P01S3 Outline SOT-323 D G：Gate S：Source D：Drain GS Ordering Information Device MTA050P01S3-0-T1-G Package SOT-323 (Pb-free lead plating and halogen-free.

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Datasheet Details

Part number MTA050P01S3
Manufacturer Cystech Electonics
File Size 346.49 KB
Description -14V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTA050P01S3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C101S3 Issued Date : 2016.06.07 Revised Date : Page No. : 1/9 -14V P-Channel Enhancement Mode MOSFET MTA050P01S3 BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-4.5V, ID=-1.7A RDSON@VGS=-2.5V, ID=-1.7A Features • Low gate charge • Compact and low profile SOT-323 package RDSON@VGS=-1.8V, ID=-1A RDSON@VGS=-1.5V, ID=-1A • Advanced trench process technology • High density cell design for ultra low on resistance • Pb-free lead plating package -14V -1.
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