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MTA25N02J3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating package BVDSS ID VGS=10V, ID=12A RDSON(TYP) VGS=4.5V, ID=6A VGS=2.5V, ID=2A 20V 22A 16mΩ 18mΩ 32mΩ Equivalent Circuit MTA25N02J3 Outline TO-252(DPAK) G G：Gate S：Source D：Drain D S Ordering Information Device MTA25N02J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS complian.

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Datasheet Details

Part number MTA25N02J3
Manufacturer Cystech Electonics
File Size 261.97 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA25N02J3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET Spec. No. : C413J3 Issued Date : 2012.08.01 Revised Date : 2013.12.26 Page No. : 1/9 MTA25N02J3 Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package BVDSS ID VGS=10V, ID=12A RDSON(TYP) VGS=4.5V, ID=6A VGS=2.
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