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MTA50N15H8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=20A.
  • Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=10A.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package 150V 26A 18.4A 4.6A 3.7A 44mΩ(typ) 43mΩ(typ) Symbol MTA50N15H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTA50N15H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating.

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Datasheet Details

Part number MTA50N15H8
Manufacturer Cystech Electonics
File Size 540.17 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA50N15H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C957H8 Issued Date : 2016.06.28 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTA50N15H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C Features • Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=20A • Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=10A • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package 150V 26A 18.4A 4.6A 3.