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MTA50P01SN3 - -14V P-Channel MOSFET

Key Features

  • Low gate charge.
  • Compact and low profile SOT-23 package.
  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-4.5V, ID=-3.6A RDSON@VGS=-2.5V, ID=-3.2A -14V -4.3A 42.3mΩ(typ) 62.9mΩ(typ) Symbol MTA50P01SN3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device MTA50P01SN3-0-T1-G Package SOT-23 (Pb-free lead plating and h.

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Datasheet Details

Part number MTA50P01SN3
Manufacturer Cystech Electonics
File Size 625.43 KB
Description -14V P-Channel MOSFET
Datasheet download datasheet MTA50P01SN3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C101N3 Issued Date : 2015.09.09 Revised Date : 2016.10.11 Page No. : 1/9 -14V P-Channel Enhancement Mode MOSFET MTA50P01SN3 Features • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-4.5V, ID=-3.6A RDSON@VGS=-2.5V, ID=-3.2A -14V -4.3A 42.3mΩ(typ) 62.