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MTA600N02KS3 - N-Channel MOSFET

Features

  • Low on-resistance.
  • ESD protected gate.
  • High speed switching.
  • Low-voltage drive.
  • Easily designed drive circuits.
  • Easy to use in parallel.
  • Pb-free lead plating and halogen-free package BVDSS ID @VGS=4.5V, TA=25°C RDSON@VGS=4.5V, ID=0.5A RDSON@VGS=2.5V, ID=0.5A RDSON@VGS=1.8V, ID=0.05A RDSON@VGS=1.5V, ID=0.02A RDSON@VGS=1.2V, ID=0.01A 20V 0.55A 0.213Ω(typ. ) 0.275Ω(typ. ) 0.332Ω(typ. ) 0.447Ω(typ. ) 0.937Ω(typ. ) Symbol MTA600N02KS3 D G.

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Datasheet Details

Part number MTA600N02KS3
Manufacturer Cystech Electonics
File Size 404.88 KB
Description N-Channel MOSFET
Datasheet download datasheet MTA600N02KS3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. N-Channel MOSFET MTA600N02KS3 Spec. No. : C144S3 Issued Date : 2016.04.11 Revised Date : Page No. : 1/8 Features • Low on-resistance • ESD protected gate • High speed switching • Low-voltage drive • Easily designed drive circuits • Easy to use in parallel • Pb-free lead plating and halogen-free package BVDSS ID @VGS=4.5V, TA=25°C RDSON@VGS=4.5V, ID=0.5A RDSON@VGS=2.5V, ID=0.5A RDSON@VGS=1.8V, ID=0.05A RDSON@VGS=1.5V, ID=0.02A RDSON@VGS=1.2V, ID=0.01A 20V 0.55A 0.213Ω(typ.) 0.275Ω(typ.) 0.332Ω(typ.) 0.447Ω(typ.) 0.937Ω(typ.
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