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MTB028N10QNCQ8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=4A RDS(ON)@VGS=4.5V, ID=3A 100V 6.6A 19.3 mΩ(typ) 27.0mΩ(typ) Symbol MTB028N10QNCQ8 Outline DD SOP-8 DD G：Gate D：Drain S：Source NC : Not Connected Pin 1 G S NC S Ordering Information Device MTB028N10QNCQ8-0-T3-G Package Shipping SOP-8 (RoHS compliant & Halog.

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Datasheet Details

Part number MTB028N10QNCQ8
Manufacturer Cystech Electonics
File Size 428.93 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB028N10QNCQ8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB028N10QNCQ8 Spec. No. : C168Q8 Issued Date : 2016.11.18 Revised Date : 2016.11.22 Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=4A RDS(ON)@VGS=4.5V, ID=3A 100V 6.6A 19.3 mΩ(typ) 27.