MTB032P06AV8 Datasheet | Cystech Electonics

CYStech Electronics Corp. Spec. No. : C924V8 Issued Date : 2015.10.26 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB032P06AV8 BVDSS ID@VGS=-10V, TC=25°C RDSON@VGS=10V, ID=-6A RDSON@VGS=-4.5V, ID=-4A Description -60V -25A 30mΩ(typ) 35mΩ(typ) The MTB032P06AV8 is a P-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features - Simple drive requirement - Low on-resistance - Fast switching speed - Pb-free lead plating and halogen-free package Equivalent Circuit Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Dev...