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MTB032P06AV8 - P-Channel Enhancement Mode MOSFET

General Description

The MTB032P06AV8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTB032P06AV8 Outline Pin 1 DFN3×3 G:Gate S:Source D:Drain Ordering Information Device MTB032P06AV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec.

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Datasheet Details

Part number MTB032P06AV8
Manufacturer Cystech Electonics
File Size 405.41 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTB032P06AV8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C924V8 Issued Date : 2015.10.26 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB032P06AV8 BVDSS ID@VGS=-10V, TC=25°C RDSON@VGS=10V, ID=-6A RDSON@VGS=-4.5V, ID=-4A Description -60V -25A 30mΩ(typ) 35mΩ(typ) The MTB032P06AV8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.