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MTB09N03H8 - N-Channel Logic Level Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Dynamic dv/dt rating.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and Halogen-free package 30V 56A 7 mΩ(typ) 13 mΩ(typ) Symbol MTB09N03H8 Outline Pin 1 DFN5×6 G:Gate D:Drain S:Source Ordering Information Device MTB09N03H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S.

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Datasheet Details

Part number MTB09N03H8
Manufacturer Cystech Electonics
File Size 389.57 KB
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet download datasheet MTB09N03H8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2009.05.07 Revised Date : 2014.11.10 Page No. : 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET MTB09N03H8 BVDSS ID RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=4.