Datasheet Summary
CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
Spec. No. : C059J3 Issued Date : 2016.09.01 Revised Date : Page No. : 1/9
Features
- Low Gate Charge
- Simple Drive Requirement
- ESD protected gate
- Pb-free lead plating & Halogen-free package
BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=6A
100V 10A 108mΩ(TYP) 123mΩ(TYP)
Equivalent Circuit
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTB100N10RKJ3-0-T3-G
Package
TO-252 (Pb-free lead plating & Halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS pliant products, G for RoHS pliant and...