MTB1D5N03H8 Datasheet PDF - Cystech Electonics N-Channel Enhancement Mode Power MOSFET Specs

MTB1D5N03H8 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 156A(silicon limit) 84A(package limit) 23.5A 1.3mΩ(typ) 1.6mΩ(typ) Symbol MTB1D5N03H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB1D5N03H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plati.

Datasheet Details

Part number	MTB1D5N03H8
Manufacturer	Cystech Electonics
File Size	549.80 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB1D5N03H8 Datasheet
Additional preview pages of the MTB1D5N03H8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C984H8 Issued Date : 2017.01.06 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTB1D5N03H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 156A(silicon limit) 84A(package limit) 23.5A 1.3mΩ(typ) 1.

Published: Feb 28, 2017 |