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MTB1D5N03H8 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Spec. No. : C984H8 Issued Date : 2017.01.06 Revised Date : Page No.

Datasheet Details

Part number MTB1D5N03H8
Manufacturer Cystech Electonics
File Size 549.80 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTB1D5N03H8-CystechElectonics.pdf

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 156A(silicon limit) 84A(package limit) 23.5A 1.3mΩ(typ) 1.6mΩ(typ) Symbol MTB1D5N03H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB1D5N03H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plati.

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