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MTB1D7N03E3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTB1D7N03E3 Outline TO-220 G:Gate D:Drain S:Source GDS Ordering Information Device Package Shipping MTB1D7N03E3-0-UB-S TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20.

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Datasheet Details

Part number MTB1D7N03E3
Manufacturer Cystech Electonics
File Size 334.89 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB1D7N03E3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C948E3 Issued Date : 2014.03.05 Revised Date : 2017.04.05 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB1D7N03E3 BVDSS ID @VGS=10V RDSON(TYP) @ VGS=10V, ID=30A RDSON(TYP) @ VGS=4.5V, ID=20A 30V 203A 2mΩ 2.