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MTB1D7N03E3 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTB1D7N03E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTB1D7N03E3-0-UB-S TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20.

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Datasheet Details

Part number MTB1D7N03E3
Manufacturer Cystech Electonics
File Size 334.89 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB1D7N03E3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C948E3 Issued Date : 2014.03.05 Revised Date : 2017.04.05 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB1D7N03E3 BVDSS ID @VGS=10V RDSON(TYP) @ VGS=10V, ID=30A RDSON(TYP) @ VGS=4.5V, ID=20A 30V 203A 2mΩ 2.
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