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MTB20A03KQ8 - Dual N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement RDS(ON)@VGS=4.5V, ID=7A 18.8 mΩ(typ) RDS(ON)@VGS=4V, ID=7A 21 mΩ(typ).
  • Low On-resistance.
  • Fast Switching Characteristic.
  • ESD Protected.
  • Pb-free & Halogen-free package Symbol MTB20A03KQ8 Outline SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTB20A03KQ8-0-T3-G Package SOP-8 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant pro.

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Datasheet Details

Part number MTB20A03KQ8
Manufacturer Cystech Electonics
File Size 357.82 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB20A03KQ8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C737Q8 Issued Date : 2015.04.24 Revised Date : Page No. : 1/9 Dual N-Channel Logic Level Enhancement Mode Power MOSFET MTB20A03KQ8 BVDSS 30V ID@VGS=10V, TA=25°C 7A ID@VGS=10V, TA=70°C 5.6A RDS(ON)@VGS=10V, ID=7A 14.7 mΩ(typ) Features • Single Drive Requirement RDS(ON)@VGS=4.5V, ID=7A 18.