MTB20N06J3-T3-G - N-Channel MOSFET

Cystech Electonics

Download the MTB20N06J3-T3-G datasheet PDF. This datasheet also covers the MTB20N06J3 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant and halogen-free package BVDSS ID RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 42A 14.6 mΩ(typ) 16.7 mΩ(typ) Symbol MTB20N06J3 Outline TO-252(DPAK) G G：Gate D：Drain S：Source D S Ordering Information Device MTB20N06J3-T3-G Package TO-252 (RoHS compliant and halogen-free package) Shipping 2500 pcs / tape& reel Environment friendly.

📥 Download Datasheet

MTB20N06J3-T3-G n-channel mosfet by Cystech Electonics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MTB20N06J3-CystechElectonics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MTB20N06J3-T3-G
Manufacturer	Cystech Electonics
File Size	261.44 KB
Description	N-Channel MOSFET
Datasheet	MTB20N06J3-T3-G Datasheet

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Other Datasheets by Cystech Electonics

Part Number	Description
MTB20N06J3	N-Channel MOSFET
MTB20N03AQ8	N-Channel MOSFET
MTB20N03Q8	N-Channel MOSFET
MTB20A03KQ8	Dual N-Channel Enhancement Mode Power MOSFET
MTB20A03Q8	Dual N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C925J3 Issued Date : 2013.08.13 Revised Date : 2013.12.30 Page No. : 1/ 9 MTB20N06J3 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant and halogen-free package BVDSS ID RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 42A 14.6 mΩ(typ) 16.