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MTB24B03Q8 - Dual P-Channel Enhancement Mode Power MOSFET

Features

  • RDS(ON)=24mΩ(max. )@VGS=-10V, ID=-8A.
  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Dual P-ch MOSFET package.
  • Pb-free lead plating & Halogen-free package RDSON(MAX)@VGS=-4.5V, ID=-6A -30V -8A 18mΩ(typ. ) 27mΩ(typ. ) Equivalent Circuit MTB24B03Q8 Outline SOP-8 D2 D2 D1 D1 G：Gate D：Drain S：Source Pin 1 G2 S2 G1 S1 Ordering Information Device MTB24B03Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating and halog.

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Datasheet Details

Part number MTB24B03Q8
Manufacturer Cystech Electonics
File Size 303.98 KB
Description Dual P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB24B03Q8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C587Q8 Issued Date : 2011.01.27 Revised Date : 2016.12.05 Page No. : 1/9 Dual P-Channel Logic Level Enhancement Mode Power MOSFET MTB24B03Q8 BVDSS ID @VGS=-10V, TC=25 °C RDSON(MAX)@VGS=-10V, ID=-8A Features • RDS(ON)=24mΩ(max.)@VGS=-10V, ID=-8A • Simple drive requirement • Low on-resistance • Fast switching speed • Dual P-ch MOSFET package • Pb-free lead plating & Halogen-free package RDSON(MAX)@VGS=-4.5V, ID=-6A -30V -8A 18mΩ(typ.) 27mΩ(typ.
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