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MTB2D5N03BE3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=20A 30V 111A(Si limit) 66A(PKG limit) 17.5A 3.5 mΩ(typ) 4.6 mΩ(typ) Symbol MTB2D5N03BE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB2D5N03BE3-0-UB-X Package TO-220 (RoHS compliant) Shippi.

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Datasheet Details

Part number MTB2D5N03BE3
Manufacturer Cystech Electonics
File Size 347.66 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB2D5N03BE3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB2D5N03BE3 Spec. No. : C998E3 Issued Date : 2016.08.01 Revised Date : Page No. : 1/ 8 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=20A 30V 111A(Si limit) 66A(PKG limit) 17.5A 3.5 mΩ(typ) 4.