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MTB6D0N03BJ3 - N-Channel Logic Level Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and halogen-free package BVDSS ID @ VGS=10V, TA=25°C ID @ VGS=10V, TC=25°C RDSON(TYP) VGS=10V, ID=25A VGS=4.5V, ID=15A 30V 12A 44A 6.4mΩ 10.4mΩ Equivalent Circuit MTB6D0N03BJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB6D0N03BJ3-0-T3-G Package TO-252 (Pb-free lead plating and.

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Datasheet Details

Part number MTB6D0N03BJ3
Manufacturer Cystech Electonics
File Size 375.35 KB
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet download datasheet MTB6D0N03BJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : CA00J3 Issued Date : 2015.10.23 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB6D0N03BJ3 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and halogen-free package BVDSS ID @ VGS=10V, TA=25°C ID @ VGS=10V, TC=25°C RDSON(TYP) VGS=10V, ID=25A VGS=4.5V, ID=15A 30V 12A 44A 6.4mΩ 10.