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MTC4505AQ8 - N- and P-Channel Enhancement Mode Power MOSFET

Key Features

  • RDSON(typ. ) @VGS=(-)4.5V.
  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package N-CH 30V 12A 8.8 mΩ 11.3mΩ P-CH -30V -10A 14.6 mΩ 20.3 mΩ Equivalent Circuit MTC4505AQ8 Outline SOP-8 D2 D2 D1 D1 G：Gate S：Source D：Drain Pin 1 G2 S2 G1 S1 Ordering Information Device MTC4505AQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment fr.

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Datasheet Details

Part number MTC4505AQ8
Manufacturer Cystech Electonics
File Size 405.35 KB
Description N- and P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTC4505AQ8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C921Q8 Issued Date : 2016.11.07 Revised Date : Page No. : 1/12 N- and P-Channel Enhancement Mode Power MOSFET MTC4505AQ8 BVDSS ID@VGS=10V(-10V), TA=25°C RDSON(typ.) @VGS=(-)10V Features RDSON(typ.) @VGS=(-)4.5V • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package N-CH 30V 12A 8.8 mΩ 11.3mΩ P-CH -30V -10A 14.6 mΩ 20.