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MTC4603H8 - N- and P-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package N-CH 30V 10.3A 32.8A 10.0mΩ 12.7mΩ P-CH -30V -9.6A -30.3A 15.0mΩ 21.6mΩ Equivalent Circuit MTC4603H8 Outline Pin 1 DFN5×6 Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTC4603H8-0-T6-G Package Shipping DFN 5 ×6 (Pb-free lead plating & halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compl.

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Datasheet Details

Part number MTC4603H8
Manufacturer Cystech Electonics
File Size 660.45 KB
Description N- and P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTC4603H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C921H8 Issued Date : 2016.11.07 Revised Date : 2016.11.08 Page No. : 1/14 N- and P-Channel Enhancement Mode MOSFET MTC4603H8 BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package N-CH 30V 10.3A 32.8A 10.0mΩ 12.7mΩ P-CH -30V -9.6A -30.3A 15.0mΩ 21.