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MTC5806V8 - N-&P-Channel MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTC5806V8 Outline DFN3×3 G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTC5806V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 :.

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Datasheet Details

Part number MTC5806V8
Manufacturer Cystech Electonics
File Size 745.07 KB
Description N-&P-Channel MOSFET
Datasheet download datasheet MTC5806V8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C407V8 Issued Date : 2014.11.10 Revised Date : 2016.10.11 age No. : 1/13 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTC5806V8 BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON@VGS=10V(-10V) typ. RDSON@VGS=4.5V(-4.5V) typ. N-CH 60V 4.3A 6.4A 37mΩ 42mΩ P-CH -60V -3.3A -4.