MTD07A04DH8 Datasheet PDF (Dual N-Channel Enhancement Mode Power MOSFET)

MTD07A04DH8 - Dual N-Channel Enhancement Mode Power MOSFET

Features

Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=17A.
Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=10A.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package 40V 40A 25.3A 9A 7.2A 6.7mΩ(typ) 8.7mΩ(typ) Equivalent Circuit MTD07A04DH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTD07A04DH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package).

Datasheet Details

Part number	MTD07A04DH8
Manufacturer	Cystech Electonics
File Size	512.78 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MTD07A04DH8 Datasheet
Additional preview pages of the MTD07A04DH8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2016.01.18 Revised Date : Page No. : 1/ 9 Dual N-Channel Enhancement Mode Power MOSFET MTD07A04DH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C Features • Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=17A • Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=10A • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package 40V 40A 25.3A 9A 7.2A 6.7mΩ(typ) 8.

Published: Sep 4, 2016 |