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MTD080C10H8 - P- & N-Channel Enhancement Mode Power MOSFET

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 100V 3.6A 10.4A 74mΩ 82mΩ P-CH -100V -3.1A -8.8A 114mΩ 128mΩ Equivalent Circuit MTD080C10H8 Outline Pin 1 DFN5×6 Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTD080C10H8-0-T6-G Package Shipping DFN 5 ×6 (Pb-fre.

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Datasheet Details

Part number MTD080C10H8
Manufacturer Cystech Electonics
File Size 661.26 KB
Description P- & N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTD080C10H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 1/14 N- AND P-Channel Enhancement Mode MOSFET MTD080C10H8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 100V 3.6A 10.4A 74mΩ 82mΩ P-CH -100V -3.1A -8.
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