MTD170P06KN3
Key Features
- Low gate charge
- pact and low profile SOT-23 package
- Advanced trench process technology
- High density cell design for ultra low on resistance
- ESD protected gate
- Pb-free lead plating package
- Part: MTD170P06KN3
- Description: P-Channel Enhancement Mode MOSFET
- Category: MOSFET
- Manufacturer: Cystech Electonics
- Size: 416.22 KB