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MTD2K5P20KM3 - P-Channel Enhancement Mode Power MOSFET

Features

  • Single Drive Requirement.
  • Ultra High Speed Switching.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-0.6A RDSON@VGS=-4V, ID=-0.6A -200V -0.67A 1.9Ω(typ. ) 2Ω(typ. ) Symbol MTD2K5P20KM3 Outline SOT-89 G：Gate S：Source D：Drain G DD S Ordering Information Device MTD2K5P20KM3-0-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / tape & reel Environment friendly grade : S for RoHS com.

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Datasheet Details

Part number MTD2K5P20KM3
Manufacturer Cystech Electonics
File Size 350.61 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTD2K5P20KM3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. -200V P-Channel Enhancement Mode MOSFET MTD2K5P20KM3 Spec. No. : C097M3 Issued Date : 2016.06.17 Revised Date : Page No. : 1/9 Features • Single Drive Requirement • Ultra High Speed Switching • Pb-free lead plating and halogen-free package BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-0.6A RDSON@VGS=-4V, ID=-0.6A -200V -0.67A 1.9Ω(typ.) 2Ω(typ.
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