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MTDB6N20H8 - N-Channel Enhancement Mode Power MOSFET

Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package Symbol MTDB6N20H8 G:Gate D:Drain S:Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device Package Shipping MTDB6N20H8-0-T6-G DFN5×6 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and.

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Datasheet Details

Part number MTDB6N20H8
Manufacturer Cystech Electonics
File Size 541.49 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTDB6N20H8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C875H8 Issued Date : 2016.12.19 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTDB6N20H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(typ)@VGS=10V, ID=3A RDSON(typ)@VGS=4.5V, ID=2A 200 V 8A 1.
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