Datasheet Details
| Part number | MTDK3S6R |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 307.84 KB |
| Description | ESD protected N-CHANNEL MOSFET |
| Download | MTDK3S6R Download (PDF) |
|
|
| Part number | MTDK3S6R |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 307.84 KB |
| Description | ESD protected N-CHANNEL MOSFET |
| Download | MTDK3S6R Download (PDF) |
|
|
|
• Low voltage drive, 1.8V • Easy to use in parallel • High speed switching • ESD protected device • Pb-free package BVDSS ID RDSON 20V 100mA 3Ω Symbol MTDK3S6R Outline SOT-363 Tr1 Tr 2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Ta=25°C) Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : *1.
Pulse Width ≤ 300μs, Duty cycle ≤2% *2.
200mW per element must not be exceeded *3.
CYStech Electronics Corp.
ESD protected N-CHANNEL MOSFET Spec.
No.
| Part Number | Description |
|---|---|
| MTDK1S6R | N-CHANNEL MOSFET (dual transistors) |
| MTDK5S6R | ESD protected Dual N-CHANNEL MOSFET |
| MTD010P03V8 | P-Channel Enhancement Mode Power MOSFET |
| MTD011N10RH8 | N-Channel Enhancement Mode Power MOSFET |
| MTD011N10RJ3 | N-Channel Enhancement Mode Power MOSFET |
| MTD011N10RQ8 | N-Channel Enhancement Mode Power MOSFET |
| MTD015P10E3 | P-Channel Enhancement Mode Power MOSFET |
| MTD030N10QJ3 | N-Channel Enhancement Mode Power MOSFET |
| MTD06N04Q8 | N-Channel Enhancement Mode Power MOSFET |
| MTD070P15J3 | P-Channel Enhancement Mode Power MOSFET |