MTDK3S6R - ESD protected N-CHANNEL MOSFET

Description

Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package BVDSS ID RDSON 20V 100mA 3Ω Symbol MTDK3S6R Outline SOT-363 Tr1 Tr 2 The following characteristics apply to both Tr1 and Tr2 Absolute Max

Cystech Electonics

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Datasheet Details

Part number	MTDK3S6R
Manufacturer	Cystech Electonics
File Size	307.84 KB
Description	ESD protected N-CHANNEL MOSFET
Datasheet	MTDK3S6R Datasheet
Additional preview pages of the MTDK3S6R datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. ESD protected N-CHANNEL MOSFET Spec. No. : C447S6R www.DataSheet4U.com Issued Date : 2009.06.03 Revised Date : Page No. : 1/6 MTDK3S6R Description • Low voltage drive, 1.8V • Easy to use in parallel • High speed switching • ESD protected device • Pb-free package BVDSS ID RDSON 20V 100mA 3Ω Symbol MTDK3S6R Outline SOT-363 Tr1 Tr 2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Ta=25°C) Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. 200mW per element must not be exceeded *3.

Published: Apr 27, 2010 |