MTE013N08E3 Description
CYStech Electronics Corp. 2016.01.17 Revised Date : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE013N08E3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C.
MTE013N08E3 Key Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- RoHS pliant package