MTE013N08E3
Key Features
- RDS(ON)@VGS=10V, ID=20A
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- RoHS pliant package
- Part: MTE013N08E3
- Description: N-Channel Enhancement Mode Power MOSFET
- Category: MOSFET
- Manufacturer: Cystech Electonics
- Size: 383.53 KB