Datasheet4U Logo Datasheet4U.com

MTE015N10QH8 - N-Channel Enhancement Mode Power MOSFET

Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package Symbol MTE015N10QH8 G:Gate D:Drain S:Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTE015N10QH8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and.

📥 Download Datasheet

Datasheet Details

Part number MTE015N10QH8
Manufacturer Cystech Electonics
File Size 483.02 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE015N10QH8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C168H8 Issued Date : 2016.06.02 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTE015N10QH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(typ)@VGS=10V, ID=20A 100 V 39 A 8.8A 12.
Published: |