MTE015N10QH8 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Spec. No. : C168H8 Issued Date : 2016.06.02 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTE015N10QH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(typ)@VGS=10V, ID=20A 100 V 39 A 8.8A 12.

Datasheet Details

Part number	MTE015N10QH8
Manufacturer	Cystech Electonics
File Size	483.02 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE015N10QH8-CystechElectonics.pdf

Key Features

Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package Symbol MTE015N10QH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTE015N10QH8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and.

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