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MTE016N15E3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • Pb-free lead plating and RoHS compliant package 150V 65A 16.6mΩ (typ) Symbol MTE016N15E3 Outline TO-220 G：Gate D：Drain S：Source G DS Ordering Information Device MTE016N15E3-0-UB-X Package Shipping TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment.

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Datasheet Details

Part number MTE016N15E3
Manufacturer Cystech Electonics
File Size 343.65 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE016N15E3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C434E3 Issued Date : 2016.05.16 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE016N15E3 BVDSS Features • Low Gate Charge ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package 150V 65A 16.
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