MTE016N15E3 Description
CYStech Electronics Corp. 2016.05.16 Revised Date : 1/8 N-Channel Enhancement Mode Power MOSFET MTE016N15E3 BVDSS.
MTE016N15E3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- Pb-free lead plating and RoHS pliant package