• Part: MTE020N10RF3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 639.29 KB
Download MTE020N10RF3 Datasheet PDF
Cystech Electonics
MTE020N10RF3
Features - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Ro HS pliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A 100V 30A 8A 20mΩ Equivalent Circuit Outline TO-263 Ordering Information Device MTE020N10RF3-0-T7-G Package TO-263 (Pb-free lead plating and halogen-free package) Shipping 800 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T7 : 800 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStek Electronics Corp. Absolute Maximum Ratings (TA=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25C Continuous Drain Current @ VGS=10V, TC=100C Continuous Drain Current @ VGS=10V, TA=25C Continuous Drain Current @ VGS=10V, TA=70C Pulsed Drain Current Continuous Body Diode...