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MTE020N10RF3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A 100V 30A 8A 20mΩ Equivalent Circuit MTE020N10RF3 Outline TO-263 Ordering Information Device MTE020N10RF3-0-T7-G Package TO-263 (Pb-free lead plating and halogen-free package) Shipping 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant pr.

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Datasheet Details

Part number MTE020N10RF3
Manufacturer Cystech Electonics
File Size 639.29 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE020N10RF3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStek Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE020N10RF3 Spec. No. : C745F3 Issued Date : 2017.10.26 Revised Date : 2024.07.03 Page No.
Published: |