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MTE030N10QJ3 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTE030N10QJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTE030N10QJ3-0-T3-G Package Shipping TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” re.

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Datasheet Details

Part number MTE030N10QJ3
Manufacturer Cystech Electonics
File Size 588.90 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE030N10QJ3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTE030N10QJ3 Spec. No. : C168J3 Issued Date : 2016.03.17 Revised Date : 2016.04.27 Page No. : 1/9 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=15A 100V 29A 25.
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