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MTE030N15RE3 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

  • Low Gate Charge ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • Pb-free lead plating and RoHS compliant package 150V 36A 4.6A 33.3mΩ (typ) Symbol MTE030N15RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTE030N15RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Envir.

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Datasheet Details

Part number MTE030N15RE3
Manufacturer Cystech Electonics
File Size 318.14 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE030N15RE3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE030N15RE3 BVDSS ID@VGS=10V, TC=25°C Features • Low Gate Charge ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package 150V 36A 4.6A 33.
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