MTE030N15RE3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Key Features

Low Gate Charge ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A.
Simple Drive Requirement.
Repetitive Avalanche Rated.
Fast Switching Characteristic.
Pb-free lead plating and RoHS compliant package 150V 36A 4.6A 33.3mΩ (typ) Symbol MTE030N15RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTE030N15RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Envir.

MTE030N15RE3 n-channel enhancement mode power mosfet by Cystech Electonics - Datasheet Preview

Datasheet Details

Part number	MTE030N15RE3
Manufacturer	Cystech Electonics
File Size	318.14 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE030N15RE3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE030N15RE3 BVDSS ID@VGS=10V, TC=25°C Features • Low Gate Charge ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package 150V 36A 4.6A 33.