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MTE040N20P3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating package Equivalent Circuit MTE040N20P3 Outline TO-247 G:Gate D:Drain S:Source Ordering Information Device MTE040N20P3-0-UE-S GDS Package TO-247 (Pb-free lead plating package) Shipping 30 pcs / tube, 10 tubes/ box , 10 boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UE : 30 pcs / tube, 10 tubes/box, 10 boxes/carton Product.

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Datasheet Details

Part number MTE040N20P3
Manufacturer Cystech Electonics
File Size 459.76 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE040N20P3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C872P3 Issued Date : 2014.08.13 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE040N20P3 BVDSS ID RDS(ON)@VGS=10V, ID=28A RDS(ON)@VGS=6V, ID=10A 200V 50A 30.2mΩ(typ) 29.
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