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MTE050N10KRJ3 - N -Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • ESD protected gate.
  • Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=10A 100V 13A 55.5mΩ(TYP) Equivalent Circuit MTE050N10KRJ3 Outline TO-252(DPAK) G DS G：Gate D：Drain S：Source Ordering Information Device MTE050N10KRJ3-0-T3-G Package Shipping TO-252 (Pb-free lead plating & Halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS complian.

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Datasheet Details

Part number MTE050N10KRJ3
Manufacturer Cystech Electonics
File Size 451.43 KB
Description N -Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE050N10KRJ3 Datasheet
Additional preview pages of the MTE050N10KRJ3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTE050N10KRJ3 Spec. No. : C019J3 Issued Date : 2018.04.02 Revised Date : Page No. : 1/9 Features • Low Gate Charge • Simple Drive Requirement • ESD protected gate • Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=10A 100V 13A 55.
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