MTE050P10E3 Description
CYStech Electronics Corp. 2016.05.26 Revised Date.
MTE050P10E3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- RoHS pliant package
- 100V -44A -4.6A 40mΩ
MTE050P10E3 is P-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
CYStech Electronics Corp. 2016.05.26 Revised Date.