MTE050P10E3 Description
CYStech Electronics Corp. 2016.05.26 Revised Date.
MTE050P10E3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- RoHS pliant package
- 100V -44A -4.6A 40mΩ
MTE050P10E3 is P-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
| Part Number | Description |
|---|---|
| MTE050P10F3 | P-Channel Enhancement Mode Power MOSFET |
| MTE050N10KRJ3 | N -Channel Enhancement Mode Power MOSFET |
| MTE05N08E3 | N-Channel Enhancement Mode Power MOSFET |
| MTE05N08F7T | N-Channel Enhancement Mode Power MOSFET |
| MTE05N10E3 | N-Channel Enhancement Mode Power MOSFET |
CYStech Electronics Corp. 2016.05.26 Revised Date.