MTE05N10E3 Description
CYStech Electronics Corp. 2013.11.04 Revised Date.
MTE05N10E3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- RoHS pliant package
MTE05N10E3 is N-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
| Part Number | Description |
|---|---|
| MTE05N10FP | N-Channel Enhancement Mode Power MOSFET |
| MTE05N08E3 | N-Channel Enhancement Mode Power MOSFET |
| MTE05N08F7T | N-Channel Enhancement Mode Power MOSFET |
| MTE050N10KRJ3 | N -Channel Enhancement Mode Power MOSFET |
| MTE050P10E3 | P-Channel Enhancement Mode Power MOSFET |
CYStech Electronics Corp. 2013.11.04 Revised Date.