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MTE080A10Q8 - Dual N-Channel Enhancement Mode Power MOSFET

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Dual N-ch MOSFET package.
  • Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=2.5A RDSON@VGS=6V, ID=2.0A 100V 2.8A 5.0A 74mΩ(typ) 82mΩ(typ) Equivalent Circuit MTE080A10Q8 Outline SOP-8 D2 D2 D1 D1 G：Gate D：Drain S：Source Pin 1 G2 S2 G1 S1 Ordering Information Device MTE080A10Q8-0-T3-G Package Shipping SOP-8 (Pb-free.

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Datasheet Details

Part number MTE080A10Q8
Manufacturer Cystech Electonics
File Size 402.32 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE080A10Q8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 1/9 Dual N-Channel Enhancement Mode Power MOSFET MTE080A10Q8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=2.5A RDSON@VGS=6V, ID=2.0A 100V 2.8A 5.
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